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UNISONIC TECHNOLOGIES CO., LTD.
PZT5401
PNP EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE SWITCHING TRANSISTOR
FEATURES
*High Collector-Emitter Voltage: VCEO=-150V *High current gain APPLICATIONS *Telephone Switching Circuit *Amplifier
1
SOT-223
*Pb-free plating product number:PZT5401L
PIN CONFIGURATION
PIN NO. PIN NAME 1 Base 2 Collector 3 Emitter
ORDERING INFORMATION Order Number Normal Lead Free Plating PZT5401-AA3-R PZT5401L-AA3-R Package SOT-223 Packing Tape & Reel
www.unisonic.com.tw Copyright (c) 2005 Unisonic Technologies Co., LTD.
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PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage DC Collector Current Power Dissipation Operating Junction Temperature Storage Temperature
PNP EPITAXIAL SILICON TRANSISTOR
ABSOLUATE MAXIUM RATINGS (Ta = 25 , unless otherwise specified)
SYMBOL VCBO VCEO VEBO IC PD TJ TSTG RATINGS -160 -150 -5 -600 2 +150 -40 ~ +150 UNIT V V V mA W
ELECTRICAL CHARACTERISTICS (Ta= 25 , unless otherwise specified)
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain(note) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Noise Figure SYMBOL VCBO VCEO VEBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob NF TEST CONDITIONS IC=100A, IE=0 IC=1mA, IB=0 IE=10A, IC=0 VCB=120V, IE=0 VBE=-3V, Ic=0 VCE=-5V, Ic=-1mA VCE=-5V, Ic=-10mA VCE=-5V, Ic=-50mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA VCE=-10V, Ic=-10mA, f=100MHz VCB=-10V, IE=0, f=1MHz IC=-0.25mA, VCE=-5V RS=1k, f=10Hz ~ 15.7kHz MIN -160 -150 -6 TYP MAX UNIT V V V nA nA
-50 -50 80 80 80 400 -0.2 -0.5 -1 -1 400 6.0 8
V V MHz pF dB
100
Note: Pulse test: PW<300s, Duty Cycle<2%
CLASSIFICATION OF hFE
RANK RANGE A 80-170 B 150-240 C 200-400
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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TYPICAL CHARACTERICS
PNP EPITAXIAL SILICON TRANSISTOR
Fig.1 Collector output Capacitance
10 3 10
Fig.2 DC current Gain
Cob,Capacitance (pF)
VCE=-5V f=1MHz IE=0
hFE, DC current Gain
2
8
2 10
6
4
1 10
2
0 0 -10 1 -10 -10
0 10
-1 -10
-10
0
1 -10
-10
2
-10
3
Collector-Base voltage (V)
Ic,Collector current (mA)
Fig.3 Base-Emitter on Voltage
-10 3 1 -10
Fig.4 Saturation voltage
Ic=10*IB
Ic,Collector current (mA)
VCE=-5V
-10 2
Saturation voltage (V)
-10
0
VBE(sat)
-10
1
-1 -10
VCE(sat)
-2 -10
-10
0 0 -0.2 -0.4 -0.6 -0.8 -1.0
-1 -10
0 -10
1 -10
-10
2
3 -10
Base-Emitter voltage (V)
Ic,Collector current (mA)
Current Gain-bandwidth product, fT (MHz)
Fig.5 Current gain-bandwidth product
10 3
VCE=-10V
2
10
1 10
10
0 0 -10 1 -10 -10 2 3 -10
Ic,Collector current (mA)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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PZT5401
PNP EPITAXIAL SILICON TRANSISTOR
UTC assum es no responsibility for equipm ent failures that result from using products at v alues that ex ceed, ev en m om entarily, rated v alues (such as m ax im um ratings, operating condition ranges, or other param eters) listed in products specifications of any and all UT C products described or contained herein. UT C products are not designed for use in life support appliances, dev ices or system s where m alfunction of these products can be reasonably expected to result in personal injury. R eproduction in whole or in part is prohibited without the prior written consent of the copyright owner. T he inform ation presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate and reliable and m ay be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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